1. CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - Patent application
On the other hand, the capacitor electrode according to the present invention includes an Ru film, an RuO x film, and an RuON film in this order.
2. METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - Patent application
The method according to claim 12,wherein when removing the oxide film on the upper surface of the Ru film, an H 2 gas is supplied. 14. The method according to claim 13,wherein in ...
3. Manufacturing method of a semiconductor device and substrate ...
In cleaning, using ClF 3, a processing chamber in which to form an Ru film, an RuO 2 film, or a lamination film thereof, by-product such as RuF 5 producedin the process of cleaning may ...
4. Manufacturing method of semiconductor integrated circuit device ...
FIG. 60 is a graph illustrating the dependence, on a treating temperature, of the etching rate of each of an Ru film, an RuO 2 film and a photoresist film;
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